John DiNardo

Selected Publications

• N. J. DiNardo, T. Maeda Wong, and E. W. Plummer. "Semiconductor-to-metal transition in an ultrathin interface: Cs-GaAs(110)." Phys. Rev. Lett. 65 (1990): 2177-2180.
• C. A. Ventrice Jr, and N. J. DiNardo. "Potassium induced unrelaxation of the GaAs(110) surface." Phys. Rev. B43 (1991): 14313-14316.
• H. H. Weitering, J. Chen, N. J. DiNardo, and E. W. Plummer. "Electron correlation, metallization, and Fermi-level pinning at ultrathin K/Si(111) interfaces." Phys. Rev. B 48 (1993): 8119-8135.
• C. A. Ventrice Jr, and N. J. DiNardo. "K-GaAs(110) interface: Initial stages of growth and the semiconductor-to-metal transition." Phys. Rev. B 47 (1993): 6470-6479. (15 March 1993)
• D. M. Swanston, A. B. McLean, D. N. McIlroy, D. Heskett, R. Ludeke, H. Munekata, M. Prietsch, and N. J. DiNardo. "The electronic structure of molecular beam epitaxy grown InAs(110)." Can. J. Phys. 70 (1993): 1099-1103.
• N. J. DiNardo. Nanoscale Characterization of Surfaces and Interfaces. Weinheim: VCH, 1994.
• D. M. Swanston, A. B. McLean, D. N. McIlroy, D. Heskett, R. Ludeke, H. Munekata, M. Prietsch, and
• N. J. DiNardo. "Surface localized states on InAs(110)." Surf. Sci. 312 (1994): 361-368.
• H. H. Weitering, J. Chen, R. PŽrez-Sandoz, and N. J. DiNardo. "Electron localization and the nonmetal-to-metal transition at ultrathin alkali-metal/Si(111) interfaces." Surf. Sci. 307-309 (1994): 978-983.
• T. W. Mercer, D. L. Carroll, Y. Liang, N. J. DiNardo, and D. A. Bonnell. "Photoinduced scanning tunneling microscopy of insulating diamond films." J. Appl. Phys. 75 (1994): 8225-8227.
• H. H. Weitering, N. J. DiNardo, R. PŽrez-Sandoz, J. Chen, and E. J. Mele. "Structural model for the metal-induced Si(111)3x1 reconstuction." Phys. Rev. B 49 (1994): 16837-16840.